For the MOS amplifier of Fig.7.2 (a) with V _DD with V _DD = 5V and k _n = 5 m A/V ² , it is required to have the end point of the VTC, point B, at V _DS = 0.5 V. What value of R _D is required? If the transistor is replaced with another having twice the value of the transconductance parameter k _n, what new value of R _D is needed?

(a) An NMOS amplifier and

UGS 1 + iD VDD RD Vo = UDS