1. A semiconductor has an effective density of states of the conduction band of 1019/cm3, an ionized donor concentration of 1.01017/cm3, and a hole concentration of 2105/cm3. a. How far below the conduction band in eV will the Fermi level be at 300K ? b. What is the value of the intrinsic carrier concentration at 300K ? c. When rising the temperature from 300K to 500K, will the position of the Fermi level increase or decrease in energy? Why? Explain using no more than 2 sentences