1. Find the solid solubility and diffusion coefficient for: (a) boron at 950C; (b) phosphorous at 1050C. 2. A high-current ion implanter has a beam current of 30 mA. The wafer holder can hold 30 100mm diameter Si wafers. Assume a 130 keV beam energy and a total implant time of 5 minutes. Using SRIM/TRIM, determine the dose for B (in n- type Si) and P (in p-type Si). Assume the same resistivity (or concentration of dopants in the substrate Si). Please show relevant plots. 3. For the above problem, can you determine the junction depth using SRIM/TRIM? 4. A Si wafer has a 0.3 mm thick layer of thermally-grown SiO2 on it. What is the mass of this SiO2 layer