1. IDEAL MOS CAPACITOR Assume an ideal MOS capacitor made by p-type Si substrate with the following parameters: P-typedoping: NA =51017cm3 Substrate dielectric constant: s = 11.70 Oxide (SiO2) thickness: 3nm Oxide dielectric constant: i = 3.90 Oxide-Si interface charge: QF = 0 Temperature: 300K Applied bias: VG = 0.7V Intrinsiccarrierconcentration:ni =1.51010cm3 Determine the following: (A). Surface potential (s) (Hint: see Eqs. (6-28)-(6-30). Need to calculate Ci first. Assume that the MOS is in depletion and later verify that.) (B). (B). (D). (E). (F). (G). (H). Charge density (C/cm2) in the Si (Qs). Charge density (C/cm2) on the gate (Qm). Electric field in the oxide (Eox ) Electric field in the Si at the surface (Es ) Depletion Width (WD ) Total capacitance (C) of the MOS system. Threshold voltage (VT ) of this MOS capacitor