1) What is the difference between intrinsic and extrinsic silicon? 2) Describe silicon dioxide. Discuss why the oxidation of silicon is important. 3) What is doping? Why is doping important for semiconductor silicon? 4) Give one example of a trivalent dopant element and three examples of a pentavalent dopant element. From what group number of the periodic table is each of these elements? 5) Describe the n-type doping of silicon with phosphorus. 6) n-type silicon has what type of majority and minority carriers? Give the majority and minority carriers for p-type silicon. 7) What is the CZ method for crystal growth? 8) Describe the silicon seed for the CZ method and how it is used. 9) What is the name of the main equipment used in the CZ method? 10) Describe a crystal puller. Specifically, describe the crucible holder, seed, melt, pull process and ingot growth. 11) What is the objective of the pull process and what are the two main parameters that affect the pull process in the CZ method? 12) Why is dopant material added to the melt during the CZ method? 13) How can small amounts of oxygen in the ingot be beneficial? 14) Why is the float-zone method desirable to grow silicon crystal? 15) Describe the float-zone process