2) A diode is made by creating a junction of Si where one side has a large concentration of B and one side has a large concentration of P. Assume that the B concentration is uniform throughout the silicon wafer. P is supplied at the surface at a concentration of 1020 atoms/cm3. The diffusion coefficient for P at the temperature of interest is 10-12 cm2/s. a) If the diffusion process is carried out for 1 hour, at what depth from the surface will the concentration of B exceed that of P? b) What diffusion time is required to have this condition ([B] > [P]) occur at twice as deep from the surface? 2) A diode is made by creating a junction of Si where one side has a large concentration of B and one side has a large concentration of P. Assume that the B concentration is uniform throughout the silicon wafer. P is supplied at the surface at a concentration of 1020 atoms/cm3. The diffusion coefficient for P at the temperature of interest is 10-12 cm2/s. a) If the diffusion process is carried out for 1 hour, at what depth from the surface will the concentration of B exceed that of P? b) What diffusion time is required to have this condition ([B] > [P]) occur at twice as deep from the surface