2) A silicon wafer is oxidized in dry O2 at 1100C for one hour and fifteen minutes. i) Calculate the thickness of oxide grown. ii) ii) How much additional time is needed to grow 0.15m more oxide in wet O2 at 1200C ? [ The rate constants for dry O2 at 1200C are A=0.04m,B=0.045m 2/ hour and T=0.027 hour. The rate constants for wet O2 at 1200C are A=0.05 m and B=072m2/ hour ]