2. TEMPERATURE-DEPENDENCE OF CONDUCTIVITY Figures 2.1 and 2.2 provide the carrier concentration and mobility as a function of temperature for doped Si. Use these gures to answer the following: (A). Estimate the range of temperatures (in Kelvin) for which Si is in the extrinsic regime. (B). Estimate the two temperatures (in Kelvin) for which the carrier concentration in the doped Si is 1 order of magnitude below and 1 order of magnitude above the extrinsic doping. (C). Estimate the conductivity 0 at the following 3 temperatures: (i) the low end of the extrinsic regime (ii) the high end of the extrinsic regime (iii) the regime at which concentration is one order of magnitude lower than extrinsic. 1017 Figure 3-18 Carrier Intrinsic concentration vs. inverse temperature for 1015 Extrinsic Si doped with 10 5 donors/cm3. no (cm) Ionization 1013 - 1011 2 6 8 10 12 1000 / T (K)-1 Figure 2.1: Carrier concentration vs temperature of n-doped Silicon. 105 104 Mobility (cm2V-'s-1) 103 102 101 102 103 Temperature (K)