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3. (a) A sample of Si is doped with 10' cm As. Taking the electron drift mobility to be z= 1000 em?V-Is!, find the values

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3. (a) A sample of Si is doped with 10' cm As. Taking the electron drift mobility to be z= 1000 em?V-Is!, find the values of the resistivity and Hall coefficient if the hole concentration is negligible. (7 marks) (b) Explain how Hall effect can be employed in determining the type (n or p type) of semiconductors

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