5. Assuming an internal quantum efficiency of 1, compare a silicon pn-junction photodiode to a silicon Schottky junction photodiode by calculating the photocurrent and responsivity for each photodiode. Assume a perfect antireflection coating is on both devices. The optical power on the diodes is 2 (uW) at a wavelength of 500 (nm). For the pn-junction photodiode, the length of the p-type side is 0.5 (m) and the minority carrier diffusion length on the p-type side is 200 (nm). The depletion width is 2.5 (m), and on the n-type side the minority carrier diffusion length is 7 (um). For the Schottky junction, the depletion width is W = 2.5 (m). For both diodes, the photocurrent can be calculated using: [e(lpLe) e(lp+W+Ln)] Iph = qni T Po hv a. What is the photocurrent from the pn-junction photodiode? b. What is the responsivity of the pn-junction photodiode? C. What is the photocurrent from the Schottky junction photodiode? d. What is the responsivity of the Schottky junction photodiode?