3.) An Si wafer has a background doping level of 21016cm3B atoms. P is doped from a constant source with a profile of C(x)=1019erfc(4106cmx). This is followed by a drive-in step carried out at 1100C for one hour. a.) What is the total dose of P provided in the first step? b.) What is the final surface concentration of P? c.) What is the final junction depth, in m ? d.) Reanswer part (c.) for As and Sb. Use the same total dosage found in (a.) Ans: a.) 1013; b.) 1018; c.)