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3. Consider an NMOS transistor in 180nm process with W/L=0.36/0.18m. In this process, the gate oxide thickness is 40A. The high-field mobility of electrons, n

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3. Consider an NMOS transistor in 180nm process with W/L=0.36/0.18m. In this process, the gate oxide thickness is 40A. The high-field mobility of electrons, n is assumed to be 180cm2/V at 70C, threshold voltage, Vtn=0.4V and ox=3.98.85x 1014F/cm. Plot Ids vs. Vds for Vgs=0,1.2 and 1.8 V. (10 Marks) (10Mar ks) Answer =304,1.4 and 99.4,0.8

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