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4. The isochronal annealing curve of B implanted into Si is shown on the right. Consider the implant with a dose of 2.5x10 cm.
4. The isochronal annealing curve of B implanted into Si is shown on the right. Consider the implant with a dose of 2.5x10 cm. (a) At what tempcraturc docs thc dopant activation percentage reach 60%? (b) Explain why the hole concentration measured at 600 C is lower than that measured at 500 C. (c) Why is this abnormal phenomenon not observed in the implant with a dosc of 810 cm-? 1.0 8x 10m 25x 104 0.1 2x 10 150 kev Boron T 25 C 1,-30min Region Rayion IRagios I 01 600 T CI 700 900
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a at 600 degree Celsius dopant activation percent reach 60 b As the temperature is increased the number of broken bonds carriers increases because theres further thermal energy available so more and m...
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Advanced Engineering Mathematics
Authors: ERWIN KREYSZIG
9th Edition
0471488852, 978-0471488859
