Question: (a) Design a photoresistor, based on a P-type semiconductor doped with N A = 10 15 cm -3 , so that the resistance at the

(a) Design a photoresistor, based on a P-type semiconductor doped with N _A = 10 ¹⁵ cm ^-3, so that the resistance at the external generation rate of 10 ²²cm ^-3s ^-1 is 1kΩ. The following technological parameters are known: the thickness of the semiconductor film is 5μm, the minimum width of the semiconductor strip is 500μm, the electron mobility is μ _n =250 cm ²/V-s, the hole mobility is μ _p = 50 cm ²/V-s, and the minority carrier lifetime is t _n= 20μS.

(b) What is the resistance in the dark?

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To design a photoresistor we need to understand how the resistance changes with light exposure Part a Designing the Photoresistor For this part we nee... View full answer

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