Question
A lattice mismatched AlGaAs/GaAs multilayer structure with AlGaAs thickness of 2 nm separated by 20 nm GaAs is grown on a sapphire substrate. To characterize
A lattice mismatched AlGaAs/GaAs multilayer structure with AlGaAs thickness of 2 nm separated by 20 nm GaAs is grown on a sapphire substrate. To characterize the structure and chemistry in APT what are the material related information you will investigate? Explain which reconstruction method will provide the most accurate image and structure and why.
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Essential Practices For Managing Chemical Reactivity Hazards
Authors: Robert W. Johnson, Steven W. Rudy, Stephen D. Unwin
1st Edition
0816908966, 978-0816908967
