A molecular beam epitaxy (MBE) system contains separate Al and As effusion evaporation sources of 4 cm 2 area, located 10 cm from a (100)
A molecular beam epitaxy (MBE) system contains separate Al and As effusion evaporation sources of 4 cm2 area, located 10 cm from a (100) GaAs substrate. The Al source is heated to 1000C, and the As source is heated to 300C. What is the growth rate of the AlAs film in /sec? (Note that AlAs has a similar crystal structure and lattice parameter (5.661 ) as GaAs.)
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To calculate the growth rate of the AlAs film using molecular beam epitaxy MBE we need to consider t...
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Authors: Gerald E. Whittenburg, Martha Altus Buller, Steven L Gill
31st Edition
1111972516, 978-1285586618, 1285586611, 978-1285613109, 978-1111972516
