A parallel-plate capacitor is constructed from a layer of silicon dioxide of thickness 1.1 105 m between two conducting films. The dielectric constant of silicon dioxide is 3.8 and its dielectric strength is 8 106 V/m. The permittivity of free space is 8.85 1012 C 2 /N m2 .

What voltage can be applied across this capacitor without dielectric breakdown? Answer in units of V.

What should the surface area of the layer of silicon dioxide be for a 10 pF capacitor? Answer in units of mm2 .

Estimate the number of these capacitors that can fit into a square 1 cm by 1 cm.