A particular n-channel MOSFET is measured to have a drain current of 360 uA at vGs = VDS = 1V %3D %3D and 160 uA at VGS = VDS = 0.8V. What are the %3D values of kn and Vt for this device? There are two NMOS transistors operating in saturation with equal vGs and VDs: 1V is being applied to the gate of the transistors, while 1.8V is being applied to the drain and the source is grounded. o If the two devices are matched except for a maximum possible mismatch in their W/L rations of 2%, what is the maximum resulting mismatch in the saturation with equal vGs and VDS- 1V is being applied to the gate of the transistors, while 1.8V is being applied to the drain and the source is grounded. o If the two devices are matched except for a maximum possible mismatch in their W/L rations of 2%, what is the maximum resulting mismatch in the drain currents? o If the two devices are matched except for a maximum possible mismatch in their Vt values of 10 mV, what is the maximum resulting mismatch in the drain currents? Assume the V, is 0.5V.