A rectangular slab of silicon is doped with 1021 m Gallium (Ga) atoms. The intrinsic carrier concentration n, in silicon at 300K is 1.5x1015 m and it varies with temperature as T /2 exp (-E/2kT), where Eg=1.lev is the bandgap energy, T is the absolute temperature in K and k is Boltzman's constant. The silicon slab is 8 um long with a rectangular cross section of 1 um ? (1 um x 1 um). Assume kT=0.026ev and kT/q=0.026 V. Assume that the electron mobility is He=0.04 m?/Vs and that the hole mobility is un=0.02 m?/Vs. a. Evaluate the majority and minority carrier concentrations at 300 K and state the type of carrier (electrons or holes) Is this silicon p-type or n-type