Question
A silicon abrupt junction in thermal equilibrium at T = 300 K is doped such that E c EF = 0.21 eV in the
A silicon abrupt junction in thermal equilibrium at T = 300 K is doped such that Ec − EF = 0.21 eV in the n region and EF − Ev = 0.18 eV in the p region.
(a) Draw the energy band diagram of the PN junction.
(b) Determine the impurity doping concentrations in each region.
(c) Determine Vbi.
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aForward biasing increases the electron density in the cond...
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Chemistry The Central Science
Authors: Theodore Brown, Eugene LeMay, Bruce Bursten, Catherine Murphy, Patrick Woodward
12th edition
321696727, 978-0132175081, 978-0321696724
