A silicon sample is doped by arsenic donors of concentration 1.0 x 1023 m-. The sample is maintained at room temperature. (a) Assuming that all the impurities are ionized, determine the position of the Fermi level. (b) Describe the effect on the Fermi level if acceptors are introduced in the above sample at a concentration of 6.0 x 1021 m-. Eg: 1.1 eV, m, 0.7m, and m-m,

A silicon sample is doped by arsenic donors of concentration 1.01023m3. The sample is maintained at room temperature. (a) Assuming that all the impurities are ionized, determine the position of the Fermi level. (b) Describe the effect on the Fermi level if acceptors are introduced in the above sample at a concentration of 6.01021m3. Eg: 1.1eV,me=0.7me and mh=m0