A silicon semiconductor resistor in the shape of a rectangular bar with a cross sectional area of A = 4 × 10^-4 cm². The bar has a length of 0.075 cm and doped with a concentration of N_D = 5 × 10¹⁴cm^-3 donor atoms at T = 300 K. If the bias voltage is 4 V across the length of the bar and the values of m_n and m_pare 1150 cm²/V-s and 520 cm²/V-s respectively, then using n_i = 1.5 × 10¹⁰ /cm³ for silicon at T = 300 K, compute

(i) drift field E in V/cm

(ii) electron and hole drift current density

(iii) drift current flowing through the slab

(iv) resistivity of the slab.