Advanced physics

2003 Exam Paper 2017-8_fin.pdf (638 KB) Page of 10 ZOOM + to marks] (c) A silicon pop transistor is fabricated. The doping of the emitter, base and collector are as follows: p(emitter) = 1.5x1026 m-3 n(base) = 2.0x1023 m-3 p(collector) = 1.5x1023 my The minority carrier lifetimes are as follows: r(emitter) = 500 ps r(base) = 200 ns r(collector) = 600 ns What is the maximum allowable thickness of the base if the "Base Transport Factor" is to exceed 0.98 in this device. [11 marks] Next