all the step

b. Determine the substrate bias coefficient (y) and threshold voltage Vt with V$B=3, for a polysilicon gate N-channel MOS transistor, with the following parameters: substrate doping density NA=1.2x1016cm-3, polysilicon gate doping density ND=4 x1020cm-3, Vto = 1.2V, gate oxide thickness, tox=400AO, and oxide interface fixed charge density Nox=2 x 1010cm-2. Given that Esi = 11.7g , Eox = 3.97, Ep = 8.854 x 10-14 mm T = 300K, n = 1.45 x 1010cm-3,q=1.6% 10-19C , k = 1.38 x 10-23 1 cm K