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An intrinisic sample of silicon is doped with P and Al with doping densities of 1.5106/cm and 2.5106 /cm, respectively. If intrinsic carrier concentration

An intrinisic sample of silicon is doped with P and Al with doping densities of 1.5106/cm and 2.5106 /cm, respectively. If intrinsic carrier concentration of Si is 1.51010%/cm. The electron and hole densities per cm are, respectively. 2.25104,1106 1.5x104, 2.5x106 1x106, 2.25x104 1.5x106,1x104

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