Antimony (Sb) atoms are diffused into a silicon (Si) wafer using both predeposition and drive-in heat treatments. The starting or background concentration Cs of Sb in the Si wafer is 2.0 x 1020 atoms/m. The predeposition treatment is conducted at 875 C for 1.5 h and the surface concentration Cs of Sb is maintained at a constant 8.0 x 1025 atoms/m. The drive-in diffusion is then carried out at 1100 C for 2.5 h. For the diffusion of Sb in Si, values of Qd and Do are 3.65 eV/atom and 2.14 x 105 m/s, respectively. Show your work for all. 1) Calculate the initial areal concentration Qo of the Sb. 2) Calculate the drive-in depth xi (in um) of the Sb. 3) Rearrange the dopant concentration equation to solve for depth x. 4) For the drive-in treatment, calculate the depth x at which the concentration of Sb is 5.0 x 102 atoms/m. Use the equation you solved for in part 3