Question
Assume that for low carrier concentrations, the non-radiative lifetime is about 100 ns. In Si, the radiative lifetime is about 10 ms, while in GaAs,
Assume that for low carrier concentrations, the non-radiative lifetime is about 100 ns. In Si, the radiative lifetime is about 10 ms, while in GaAs, it is about 10 ns. Calculate the internal quantum efficiencies of Si and GaAs. Discuss the significance of the result
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Effective small business management An Entrepreneurial Approach
Authors: Norman M. Scarborough
10th Edition
132157462, 978-0132157469
