(a)The silicon wafer (100 orientation) is doped with 1014 cm-3 phosphorus, implant Antimony and boron, the doping concentrations are all 1013 cm-3, energy is 70 KeV. Diffusion process in the following conditions: 30 min at 1000C respectively in dry O2. Compare the concentration profile of Antimony and Boron under dry O2, and explain the phenomenon in detail. (i.e. diffusion speed and etc.) (Hint: OED/ORD phenomenon)

(b)The silicon wafer (100 orientation) is doped with 1014 cm-3 phosphorus , implant boron, phosphorus and arsenic separately and the doping concentrations are all 5x1017 cm-3 energy is 70 KeV. Diffusion process in the following conditions:80 min at 700C, 800C, 900C, 1000C, 1100C respectively in dry O2. Explain the segregation phenomenon according to the dopant (B, P, Ar) and the temperature variation. (Hint: segregation phenomenon)