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Boron (N B = 10 18 cm -3 ) doped 1 m thick Si epitaxial layer was grown on As-doped Si substrate (N As =
Boron (NB = 1018 cm-3) doped 1 m thick Si epitaxial layer was grown on As-doped Si substrate (NAs = 1018 cm-3), forming an abrupt junction of square cross section with area A = 10-4 cm2. Calculate the contact potential , the penetration depth of the space charge region into the p- and n-type materials, Q+ and the maximum value of the electric field for this diode at equilibrium (300 K). Draw an equilibrium band diagram for this diode assuming that the metal contact to p-type is Ohmic contact and metal contact to n-type is Schottky barriers
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