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Calculate the peak dopant concentration, Np if phosphorus and boron are implanted into silicon at 120 keV and 80 keV, respectively. The implant dose for

Calculate the peak dopant concentration, Np if phosphorus and boron are implanted into silicon at 120 keV and 80 keV, respectively. The implant dose for phosphorus is 2.5 x 1014 cm-2 and the implanted dose for boron is 1.0 x 1014 cm-2.

projected range (depth) Rp Boron 80Kev : 0.25um Phosphorus 120Kev : 0.15um the standard deviation, Rp Boron 80Kev : 0.08um Phosphorus 120Kev : 0.05um

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