Consider a double heterostructure made up of GaAs0.6P0.4/GaAs/GaAs0.6P0.4 layers, wherein the thickness of the GaAs layer is 10nm; the dopant concentrations are such that both GaAs and GaAs0.6P0.4 are characterized by the same Fermi energy. The direct bandgap energy (in eV at 300K ) of the ternary compound GaAs1xPx is given by Eg(x)=1.424+1.150x+0.176x2;0x0.45 a) If the conduction- and valence band-edge discontinuities are in the ratio of 60:40, draw qualitatively the energy band diagram corresponding to the double heterostructure. (Indicate clearly the values of the energy discontinuities.) b) Does the above structure form a quantum well? (Justify your answer by your own calculations/data). Given mc=0.067m0