Consider a long Si solar cell operating at 300K with the following parameters. Area, A= 1.110 4 m 2 ; Acceptor doping, N a =

Consider a long Si solar cell operating at 300K with the following parameters. Area, A= 1.1×10⁴ µm²; Acceptor doping, N_a = 1.5×10¹⁶ cm^-3; Donor doping, N_d = 4.5×10¹⁷ cm^-3; Electron diffusion coefficient, D_n = 25 cm²/s; Hole diffusion coefficient, D_p = 10 cm²/s; Electron recombination time, τ_n = 3×10^-7 s; Hole recombination time, τ_p = 1×10^-7 s; Electron hole pair generation rate by light, G_L = 10²² cm^-2 s^-1; calculate the photo current. The solar cell is reverse biased with a voltage of 2V.