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Consider a silicon P- N step junction diode with N d = 10 18 cm -3 and N a = 5 10 15 cm -3

Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?

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