Consider a silicon pn junction with the doping profile shown in Figure P7.29.

T = 300 K

(a) Calculated the applied reverse-biased voltage required so that the space charge region extends entirely through the p region.

(b) Determine the space charge width into the n+ region with the reverse-biased voltage calculated in part (a).

(c) Calculate the peak electric field for this applied voltage

1016 1014 P +(Ng Ng) (cm^3) 0 2016 50 x ()