Consider the following energy band diagram for silicon at T-300K with EG-1.12ev. Assume n= 100 cm. Note that E - E=EG/4 at x= L and EF-E-EG/4 at x=0. ON -L 0 L Ee E Ep E E (electrons) + O + E (holes) + a) Is the semiconductor in equilibrium? Why? b) What is the electron and hole concentration at x> L? c) What is the resistivity of the x> L portion of the semiconductor? d) What is the electron (JN) and hole current (Jp) densities at x= L/2? e) Sketch roughly n and p concentration versus x inside the sample. f) Is there an electron diffusion current at x= L/2 (Hint: use answer from e)? What directions? g) Sketch the electrostatic potential (V) inside the semiconductor as a function of x. h) Sketch roughly the electric field inside the semiconductor as a function of x. i) Is there an electron drift current at x=+L/2 (Hint: use answer from h)? What directions? j) What is the potential energy (P.E.) and kinetic energy (K.E) of electrons and holes located on the diagram?