Could you solve the following question?

1.5 um 1.0 um n+ sidewall A 1 um wide trench is etched in a silicon wafer, so that the sides of the trench are planes. An angled implant is performed, doping the sidewall nt and thereby enhancing the linear rate constant by a factor of 4.0. The structure is then oxidized in wet O2 at 1150 C. a. At what time during the oxidation will the groove be filled with SiO2? b. Carefully sketch the resulting profile. (100) Si