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f. The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm/V.S respectively. The corresponding values for pure silicon are
f. The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm/V.S respectively. The corresponding values for pure silicon are 1300 and 500 cm/V.S respectively. Determine the values of intrinsic conductivity for both germanium and silicon. Assume n = 2.5103 cm3 for germanium and n = 1.5100 cm for silicon at room temperature.
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Introduction to Solid State Physics
Authors: Charles Kittel
8th Edition
047141526X, 978-0471415268
