The circuit in Fig. 1 has the following operating conditions: Vin = 200V, Io = 3A, Von = 2V, fs = 100kHz, tc,on = 250ns, and te,off = 270ns. Compare the switching loss of the transistor if the diode in Fig. 1 has been replaced by a) An ultrafast diode which has the following specifications: trr = 60ns, ts = 30ns, t 30ns, and dIr/dt = 50A/us, and b) A fast recovery diode which has the following specifications: trr = 250ns, tg = 125ns, t 125ns, and dIf/dt = 24A/us. c) Compare the results if the switching frequency is increased to 500kHz. You may approximate the current during tf as a straight line in your calculation. ip IFM IR 0.251RM 0.91RM IRM IRRM R dl Os ts tf Of Qrr=Qs+Qf