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During the fabrication of your MOSFET or PMOS this semester, it was discovered that the etch rate of silicon dioxide (SiO2) in BOE had dropped
During the fabrication of your MOSFET or PMOS this semester, it was discovered that the etch rate of silicon dioxide (SiO2) in BOE had dropped from a typical etch rate of 20 /s to 4 /s. Briefly explain the impact that this lower etch rate has on the various oxide etching steps in the fabrication of the MOSFET.
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