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For 100-KeV implantation of As ions (doubly ionized As) into Si (100) at a current of 10 mA (10 -3 A) over an area of

 For 100-KeV implantation of As ions (doubly ionized As) into Si (100) at a current of 10 mA (10-3 A) over an area of a 12-inch wafer for 10 min .Calculate the damage per ion and per unit area (cm2)?

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