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For 100keVSn ions in Si, find the approximate value of dpa (Eq. (7.47)) (using tabulated values for and Rp ) for a dose of 51013
For 100keVSn ions in Si, find the approximate value of dpa (Eq. (7.47)) (using tabulated values for and Rp ) for a dose of 51013 ions /cm2 (about 1/100 of a monolayer). Note: this implantation condition is sufficient to form an amorphous layer in Si. dpaNRNd(vp())NREd0.4v(0.8) Tahle 71 Tho minimum and averaoo dienlaremont threshold enoroies =
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