For a undoped Si pristine crystal, the intrinsic carriers will increase as temperature rises, calculate the temperature at which the intrinsic carrier concentration n i (n =p = n i ) of this undoped Si is the same as the majority carrier in the doped Si in case a). Assume at T=300K for this pristine Si, n 0 =p 0 = n i =10 10 cm -3 and the band gap of Si is 1.1 eV.