For an n-type GaAs/p-type AlxGa1-xAs heterojunction at room temperature, ?EC=0.12 eV. Find built-in voltages in each region and the total depletion width at thermal equilibrium when both sides have the same impurity. concentrations of 6 x 1015 cm-3 Band gap of AlxGa1-xAs is (1.424 + 1.247x) eV and the dielectric constant is (12.4 - 3.12x). Assume x =0.2

For an n-type GaAs/p-type Alx Ga1-x As heterojunction at room temperature, AEc=0.12 eV. Find built-in voltages in each region and the total depletion width at thermal equilibrium when both sides have the same impurity concentrations of 6 x 1015 cm-3. Band gap of Alx Ga1-x As is (1.424 + 1.247x) ev and the dielectric constant is (12.4 - 3.12x). Assume x =0.2 F AE V g 2 (EG - EF) (EF2 - EV2) bi Nv for Alo.2 Gao.8 As is 7 x 1018 cm-3. Hint: Refer to figure 30, page 118 and equations 91a and 91b, page 119 of the text book (3d Ed.)