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For problem 4 , use the following oxidation kinetics data: 4.) A native oxide of height 40A is present on a Si wafer. You intend

For problem 4 , use the following oxidation kinetics data: 4.) A native oxide of height 40A is present on a Si wafer. You intend to thermally grow a 400nm oxide. Make the following calculations: a.) Compare the growth time of a dry oxide on (111) Si at 900C to 1250C. (Ans: 8hr for dry etch)

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