For the predeposition heat treatment of a semiconducting device, boron atoms are to be diffused into silicon at an elevated temperature for a period of 1.5h. If the required concentration of B at a position 1.95m below the surface is 6.601023 atoms /m3, compute the temperature at which the heat treatment is to be carried out. Assume the following: The surface concentration of B is maintained at a constant level of 4.351025 atoms /m3. The background concentration (CB) is 5.01019B atoms /m3. Activation energy and preexponential values are 3.59eV/ atom and 2.46104m2/s, respectively