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For the reaction: S i C l 4 ( g ) + 2 H 2 ( g ) S i ( s ) + 4

For the reaction:SiCl4(g)+2H2(g)Si(s)+4HCl(g),(1500K) Calculate the equilibrium constant K3 for the chemical vapor deposition
(CVD) of epitaxial Si films on a silicon substrate
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