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g. When growing epitaxial silicon on sapphire substrates to produce EDS wafers, the source of silicon is silane, which decomposes at relatively lowr temperatures compared

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g. When growing epitaxial silicon on sapphire substrates to produce EDS wafers, the source of silicon is silane, which decomposes at relatively lowr temperatures compared to other Si sources. 1. State why silane is the source chosen. ii. What the purpose of SOS wafers? Why not use regular silicon wafers, which would be much cheaper? h. What is the diiference between a partially depleted Sl (PDSCII) and a fully deleted SDI [FDSUI] device? Which one would have superior performance? ii. One can increase the speed of' MDSFETs either by straining their channels or using SDI wafers [or both]. What are the mechanisms in each case that lead to increased speed? j. Where would you use a highls; dielectric and state why? Where would you use a lowls; dielectric and state why

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