Answered step by step
Verified Expert Solution
Question
1 Approved Answer
g. When growing epitaxial silicon on sapphire substrates to produce EDS wafers, the source of silicon is silane, which decomposes at relatively lowr temperatures compared
g. When growing epitaxial silicon on sapphire substrates to produce EDS wafers, the source of silicon is silane, which decomposes at relatively lowr temperatures compared to other Si sources. 1. State why silane is the source chosen. ii. What the purpose of SOS wafers? Why not use regular silicon wafers, which would be much cheaper? h. What is the diiference between a partially depleted Sl (PDSCII) and a fully deleted SDI [FDSUI] device? Which one would have superior performance? ii. One can increase the speed of' MDSFETs either by straining their channels or using SDI wafers [or both]. What are the mechanisms in each case that lead to increased speed? j. Where would you use a highls; dielectric and state why? Where would you use a lowls; dielectric and state why
Step by Step Solution
There are 3 Steps involved in it
Step: 1
Get Instant Access to Expert-Tailored Solutions
See step-by-step solutions with expert insights and AI powered tools for academic success
Step: 2
Step: 3
Ace Your Homework with AI
Get the answers you need in no time with our AI-driven, step-by-step assistance
Get Started