H4.

Problem 3 Assume that in a Silicon sample the Fermi level is 0.2 ev below the conduction band; i.e., Ec- EF = 0.20 eV). a) What are the total number of electrons (no) and holes (po) in this sample? b) Plot n(E) = gc(E) x f(E) over the range Ec SE SEc + 0.10 ev for (a) T = 200 K and (b) T = 300 K