Hi folks, I'm looking some help with the following question relating to the implantation of Boron to a p-type silicon substrate.

Question

A P-Type Silicon substrate with a boron concentration of 2 X 10¹⁵ cm^-3 is coated with a 80nm silicon dioxide layer. A phosphorus dose of 6 X 10¹² cm^-2 is implanted at 120KeV, followed by a 50 minute drive in at 1000 degrees Celsius.

Calculate the junction depth in the Silicon (a) immediately after implantation and (b) after the drive-in step.

Range and Straggle data for phosphorus implantation in silicon, and at 120KeV is : Rp = 148nm and delta Rp = 40nm.

Diffusion parameters for phosphorus in silicon are: D0 = 10.5 cm²/s and E_A = 3.69eV

Can anyone prove the steps to follow for this question? Thanks