Identify the linear and the parabolic rate constants in terms of the parameters and the properties defined above from the model solution, and there is another parameter that provides information about the operative mechanism of the growth process.

T ('C) 1 100 1 000 900 800 1000 100 Kp (nm2/min) 10 K (nm/min) 0.1 p # 1 atm 0.01 7.0 7.5 8.0 8.5 9.0 9.5 104/T (K-' ) Arrhenius plot of the linear and parabolic rate constants for silicon oxidation at one atmosphere of oxidant. Data from Irene and Dong [9, Fig. 2]: reprinted by permission of the publisher, The Electrochemical Society, Inc